Title :
Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template
Author :
Kuo, Cheng-Huang ; Chang, Li-Chuan ; Chou, Hsiu-Mei
Author_Institution :
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
fDate :
4/1/2012 12:00:00 AM
Abstract :
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; light emitting diodes; nanorods; wide band gap semiconductors; GaN:Si; current spreading improvement; light emitting diode; light output power; nanorod template; Conductivity; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Resistance; Substrates; Current spreading; InGaN/GaN; light-emitting diode (LED); nano;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2185043
