Title :
Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
Author :
Ryu, S. ; Kornegay, K.T. ; Cooper, J.A., Jr. ; Melloch, M.R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET´s and PMOSFET´s are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.
Keywords :
CMOS logic circuits; integrated circuit technology; ion implantation; semiconductor materials; silicon compounds; 6H-SiC; NAND gate; NOR gate; SiC; XOR gate; enhancement mode NMOSFET; enhancement mode PMOSFET; flip-flop; half adder; implanted p-well; inverter; logic circuit; monolithic CMOS digital integrated circuit; n-type epilayer; ring oscillator; Annealing; CMOS digital integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Implants; Inverters; MOS devices; MOSFET circuits; Temperature;
Journal_Title :
Electron Device Letters, IEEE
