DocumentCode :
1425696
Title :
Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
Author :
Chindalore, G. ; Hareland, S.A. ; Jallepalli, S.A. ; Tasch, A.F. ; Maziar, C.M. ; Chia, V.K.F. ; Smith, S.
Author_Institution :
Texas Univ., Austin, TX, USA
Volume :
18
Issue :
5
fYear :
1997
fDate :
5/1/1997 12:00:00 AM
Firstpage :
206
Lastpage :
208
Abstract :
The authors report for the first time, accurately extracted experimental data for the threshold voltage shift (/spl Delta/VT) due to quantum mechanical (QM) effects in hole inversion layers in MOS devices, Additional experimental results are presented for QM effects in electron inversion layers. Compared to classical calculations, which ignore QM effects, these effects are found to cause a significant increase in the threshold voltage (/spl sim/100 mV) in MOSFET devices with oxide thicknesses and doping levels anticipated for technologies with gate lengths /spl les/0.25 μm. /spl Delta/VT has been determined from experimental devices with doping levels ranging from 5×10/sup 15/-1×10/sup 18//cm3, and recently developed theoretical models are found to agree well with the results. In addition, an innovative technique using a two-dimensional (2-D) device simulator in conjunction with the experimental capacitance-voltage (C-V) characteristics has been developed in order to more accurately extract various physical parameters of the MOS structure.
Keywords :
MIS structures; MOSFET; doping profiles; inversion layers; semiconductor device models; 0.25 micron; 2D device simulator; C-V characteristics; MOS electron inversion layers; MOS hole inversion layers; MOS structure; MOSFET devices; capacitance-voltage characteristics; doping levels; oxide thickness; physical parameters; quantum mechanical effects; threshold voltage shifts; Capacitance-voltage characteristics; Charge carrier processes; Data mining; Doping; MOS devices; MOSFET circuits; Quantum mechanics; Semiconductor process modeling; Threshold voltage; Two dimensional displays;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.568765
Filename :
568765
Link To Document :
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