Title :
A 277-GHz fmax transferred-substrate heterojunction bipolar transistor
Author :
Agarwal, B. ; Mensa, D. ; Pullela, R. ; Lee, Q. ; Bhattacharya, U. ; Samoska, L. ; Guthrie, J. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We report a AlInAs-GaInAs transferred-substrate heterojunction bipolar transistor (HBT). The transferred-substrate process permits fabrication of narrow and aligned collector-base and emitter-base junctions, reducing the collector-base capacitance and increasing the device fmax. A device with aligned 0.7-μm emitter and 1.6-μm collector stripes has extrapolated 277 GHz fmax and 127 GHz f/sub /spl tau//, respectively.
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; capacitance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; substrates; 0.7 micron; 1.6 micron; 127 GHz; 277 GHz; AlInAs-GaInAs; EHF; MM-wave device; aligned collector-base junction; aligned emitter-base junctions; collector-base capacitance reduction; heterojunction bipolar transistor; transferred-substrate HBT; Analog-digital conversion; Capacitance; Cutoff frequency; Dry etching; Epitaxial layers; Fabrication; Gold; Heterojunction bipolar transistors; Substrates; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
