• DocumentCode
    1425748
  • Title

    A 277-GHz fmax transferred-substrate heterojunction bipolar transistor

  • Author

    Agarwal, B. ; Mensa, D. ; Pullela, R. ; Lee, Q. ; Bhattacharya, U. ; Samoska, L. ; Guthrie, J. ; Rodwell, M.J.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    18
  • Issue
    5
  • fYear
    1997
  • fDate
    5/1/1997 12:00:00 AM
  • Firstpage
    228
  • Lastpage
    231
  • Abstract
    We report a AlInAs-GaInAs transferred-substrate heterojunction bipolar transistor (HBT). The transferred-substrate process permits fabrication of narrow and aligned collector-base and emitter-base junctions, reducing the collector-base capacitance and increasing the device fmax. A device with aligned 0.7-μm emitter and 1.6-μm collector stripes has extrapolated 277 GHz fmax and 127 GHz f/sub /spl tau//, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar MIMIC; capacitance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; substrates; 0.7 micron; 1.6 micron; 127 GHz; 277 GHz; AlInAs-GaInAs; EHF; MM-wave device; aligned collector-base junction; aligned emitter-base junctions; collector-base capacitance reduction; heterojunction bipolar transistor; transferred-substrate HBT; Analog-digital conversion; Capacitance; Cutoff frequency; Dry etching; Epitaxial layers; Fabrication; Gold; Heterojunction bipolar transistors; Substrates; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.568774
  • Filename
    568774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1425748