DocumentCode :
1425764
Title :
Low-profile inverted-F antenna with parasitic elements on an infinite ground plane
Author :
Nakano, H. ; Suzuki, R. ; Yamauchi, J.
Author_Institution :
Coll. of Eng., Hosei Univ., Koganei, Japan
Volume :
145
Issue :
4
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
321
Lastpage :
325
Abstract :
An inverted-F antenna (IFA) whose height is approximately one-tenth of the wavelength is analysed in the presence of a single parasitic element. The resonance phenomena of the parasitic element and IFA are investigated. Based on this investigation, an IFA with a pair of parasitic elements is fabricated and analysed. It is found that the lower and higher resonance frequencies are independently determined by the parasitic element length and the IFA inner length, respectively. The independent resonance phenomena lead to the enhancement of the VSWR frequency bandwidth. A 26% VSWR frequency bandwidth, which is more than three times as wide as that of a conventional inverted-F antenna without parasitic elements, is realised. The radiation pattern and gain are also presented and discussed
Keywords :
antenna radiation patterns; antenna testing; electric impedance; method of moments; mobile antennas; resonance; IFA inner length; VSWR frequency bandwidth; gain; infinite ground plane; input impedance; low-profile inverted-F antenna; method of moments; mobile communication antenna; parasitic element length; radiation pattern; resonance frequencies; resonance phenomena;
fLanguage :
English
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
Publisher :
iet
ISSN :
1350-2417
Type :
jour
DOI :
10.1049/ip-map:19982067
Filename :
713340
Link To Document :
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