Title :
107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies
Author :
Tirelli, Stefano ; Marti, Diego ; Sun, Haifeng ; Alt, Andreas R. ; Benedickter, Hansruedi ; Piner, Edwin L. ; Bolognesi, C.R.
Author_Institution :
Electromagn. Fields & Microwave Electron. Lab., ETH Zurich, Zurich, Switzerland
fDate :
4/1/2010 12:00:00 AM
Abstract :
We report high-speed fully passivated deep submicrometer (Al,Ga)N/GaN high-electron mobility transistors (HEMTs) grown on (111) high-resistivity silicon with current gain cutoff frequencies of as high as fT = 107 GHz and maximum oscillation frequencies reaching fMAX = 150 GHz. Together, these are the highest fT and fMAX values achieved for GaN-based HEMTs implemented on silicon substrates to date. The performance reported here is competitive with recently published results for similar geometry high-performance passivated HEMTs on semi-insulating silicon-carbide substrates.
Keywords :
III-V semiconductors; aluminium compounds; circuit oscillations; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon; wide band gap semiconductors; (111) high-resistivity silicon; AlGaN-GaN; HEMT; Si; current gain cutoff frequencies; frequency 107 GHz; high-electron mobility transistors; high-speed fully passivated deep submicrometer; maximum oscillation frequencies; AlGaN/GaN; high-electron mobility transistors (HEMTs); high-frequency performance; high-resistivity silicon (HR-Si); millimeter-wave transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2039847
