DocumentCode :
1426012
Title :
Measurements and analysis of neutron-reaction-induced charges in a silicon surface region
Author :
Tosaka, Y. ; Satoh, S. ; Suzuki, K. ; Sugii, T. ; Nakayama, N. ; Ehara, H. ; Woffinden, G.A. ; Wender, S.A.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
44
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
173
Lastpage :
178
Abstract :
We directly measured neutron-reaction-induced charges in the silicon surface region using silicon-on-insulator (SOI) test structures. Because the neutron beam used has an energy spectrum similar to that of sea-level atmospheric neutrons, our charge collection data correspond to those induced by cosmic ray neutrons. Measured charge collection spectra were dependent on the SOI thickness and agreed with simulated results. An application for the neutron-induced upset rate prediction was also discussed. Furthermore, the charge collection components were separated by our charge collection simulator
Keywords :
cosmic ray neutrons; neutron detection; silicon; SOI test structures; SOI thickness; Si surface region; charge collection data; cosmic ray neutrons; energy spectrum; neutron beam; neutron-induced upset rate prediction; neutron-reaction-induced charges; sea-level atmospheric neutrons; silicon-on-insulator test structures; Atmospheric measurements; Atmospheric modeling; Charge measurement; Current measurement; Neutrons; Particle beams; Sea surface; Silicon on insulator technology; Testing; Thickness measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.568799
Filename :
568799
Link To Document :
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