Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

Author

Lu, Bin ; Piner, Edwin L. ; Palacios, Tomás

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

302

Lastpage

304

Abstract

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-??m-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.

Keywords

Schottky barriers; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; AlGaN-GaN; HEMT; Schottky-drain contact technology; Schottky-drain metallization; Si; buffer breakdown voltage; high-electron mobility transistors; planar contact morphology; size 2 mum; Buffer breakdown; GaN-on-silicon; Schottky drain; high-electron mobility transistor (HEMT); power electronics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2040704

Filename

5420022