Title :
Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
Author :
Lu, Bin ; Piner, Edwin L. ; Palacios, Tomás
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
fDate :
4/1/2010 12:00:00 AM
Abstract :
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-??m-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.
Keywords :
Schottky barriers; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; AlGaN-GaN; HEMT; Schottky-drain contact technology; Schottky-drain metallization; Si; buffer breakdown voltage; high-electron mobility transistors; planar contact morphology; size 2 mum; Buffer breakdown; GaN-on-silicon; Schottky drain; high-electron mobility transistor (HEMT); power electronics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2040704
