DocumentCode
1426598
Title
Investigation of wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes
Author
Sheu, J.K. ; Su, Y.K. ; Chang, S.J. ; Jou, M.J. ; Liu, C.C. ; Chi, G.C.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
145
Issue
4
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
248
Lastpage
252
Abstract
This paper investigates the differences of wafer-bonded n-(Al0.7Ga0.3)0.5In0.5 P/n-GaP, n-Ga0.5In0.5P/n-GaP and n-GaP/n-GaP heterointerfaces. The current-voltage characteristics have been demonstrated to be a result of different wafer cleaning methods. Bonded interfaces were also characterised by scanning electron microscopy and transmission electron microscopy. In addition, an (AlxGa1-x)0.5In0.5P light-emitting diode (LED) was fabricated by wafer direct bonding technique. The luminous intensity of the wafer-bonded (AlxGa 1-x)0.5In0.5P/Gap LED is about two times brighter than the conventional device with an absorbing GaAs substrate
Keywords
III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; light emitting diodes; optical fabrication; scanning electron microscopy; transmission electron microscopy; wafer bonding; AlGaInP-GaP; LED; absorbing GaAs substrate; bonded interfaces; brighter; current-voltage characteristics; luminous intensity; n-(Al0.7Ga0.3)0.5In0.5 P/n-GaP heterointerfaces; n-Ga0.5In0.5P/n-GaP heterointerfaces; n-GaP/n-GaP heterointerfaces; scanning electron microscopy; transmission electron microscopy; wafer cleaning methods; wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes; wafer-bonded (AlxGa1-x)0.5In0.5P/Gap LED;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19982147
Filename
714601
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