Title :
Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis
Author :
Garetto, Davide ; Randriamihaja, Yoann Mamy ; Rideau, Denis ; Zaka, Alban ; Schmid, Alexandre ; Leblebici, Yusuf ; Jaouen, Hervé
Author_Institution :
Syst. & Technol. Group, IBM, Crolles, France
fDate :
3/1/2012 12:00:00 AM
Abstract :
Complementary MOS device electrical performances are considerably affected by the degradation of the oxide layers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.
Keywords :
MOSFET; elemental semiconductors; phonon-phonon interactions; silicon; silicon compounds; MOS field-effect transistor oxide; Si-SiO2; bias voltage; carrier capture-emission; complementary MOS device electrical performance; electrically stressed MOS impedance; impedance analysis; modeling stressed MOS oxide; multiphonon-assisted quantum approach; nonradiative multiphonon theory; oxide defect; stress condition; the oxide layer degradation; Charge carrier processes; Equations; Logic gates; Mathematical model; Silicon; Stress; Transient analysis; Charge trapping; impedance characterization; multiphonon-assisted (MPA) capture; oxide degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2181388
