Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Author

Garetto, Davide ; Randriamihaja, Yoann Mamy ; Rideau, Denis ; Zaka, Alban ; Schmid, Alexandre ; Leblebici, Yusuf ; Jaouen, Hervé

Author_Institution

Syst. & Technol. Group, IBM, Crolles, France

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

610

Lastpage

620

Abstract

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide layers and Si/SiO₂ interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.

Keywords

MOSFET; elemental semiconductors; phonon-phonon interactions; silicon; silicon compounds; MOS field-effect transistor oxide; Si-SiO₂; bias voltage; carrier capture-emission; complementary MOS device electrical performance; electrically stressed MOS impedance; impedance analysis; modeling stressed MOS oxide; multiphonon-assisted quantum approach; nonradiative multiphonon theory; oxide defect; stress condition; the oxide layer degradation; Charge carrier processes; Equations; Logic gates; Mathematical model; Silicon; Stress; Transient analysis; Charge trapping; impedance characterization; multiphonon-assisted (MPA) capture; oxide degradation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2181388

Filename

6135782