Title :
1.5 V 1.8 GHz bandpass amplifier
Author :
Chan, I.L. ; Do, M.A. ; Yeo, K.S. ; Ma, J.-G.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
12/1/2000 12:00:00 AM
Abstract :
To have a fully integrated communication system in CMOS, a CMOS bandpass amplifier which combines the functions of low noise amplifier (LNA) and bandpass filter (BPF) is necessary. In a conventional bandpass amplifier, a Q-enhancement circuit is required to compensate for the resistive loss in the integrated inductor. The Q-enhancement circuit, however, being active, increases the power consumption (Pd) and noise figure (NF) of the system. In the paper, a new bandpass amplifier has been proposed which can achieve the required Q without an additional Q-enhancement circuit. Comparison with other recent designs shows that the proposed amplifier has the lowest Pd and the best noise performance. Based on the CSM 0.25 μm CMOS process, the bandpass amplifier has a gain of 25.3 dB, a Q of 30, an NF of 3.56 dB and a Pd of 35.7 mW at 1.8 GHz
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; Q-factor; UHF amplifiers; UHF integrated circuits; band-pass filters; field effect MMIC; inductors; integrated circuit noise; 0.25 micron; 1.5 V; 1.8 GHz; 25.3 dB; 3.56 dB; 35.7 mW; Q-enhancement circuit; bandpass amplifier; bandpass filter; integrated inductor; low noise amplifier; noise performance; resistive loss;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20000607
