DocumentCode
1427431
Title
Surface acoustic waves in a gallium arsenide-conducting layer structure
Author
Zaitsev, B.D. ; Kuznetsova, I.E.
Author_Institution
Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia
Volume
43
Issue
6
fYear
1996
Firstpage
1130
Lastpage
1132
Abstract
The electron attenuation and SAW velocity versus the surface conductivity and magnetic field induction for the structure consisting of the [001] cut anisotropic GaAs substrate and an isotropic conducting layer was calculated. The SAW propagated along the [110] piezoactive direction distinguished by the greatest electromechanical coupling coefficient.
Keywords
III-V semiconductors; acoustic materials; gallium arsenide; piezoelectric semiconductors; surface conductivity; ultrasonic velocity; GaAs; GaAs conducting layer structure; SAW propagation; SAW velocity; [001] cut anisotropic GaAs substrate; [110] piezoactive direction; electromechanical coupling coefficient; electron attenuation; isotropic conducting layer; magnetic field induction; surface acoustic waves; surface conductivity; Acoustic propagation; Acoustic waves; Anisotropic magnetoresistance; Attenuation; Conductivity; Electrons; Gallium arsenide; III-V semiconductor materials; Magnetic fields; Surface acoustic waves;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.542056
Filename
542056
Link To Document