Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes

Author

Lin, Chia-Chien ; Liu, Kuc-Shung ; Wu, Meng-Chyi ; Shiao, Hung-Pin

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

17

fYear

1998

fDate

8/20/1998 12:00:00 AM

Firstpage

1667

Lastpage

1668

Abstract

Low threshold current and high temperature operation is achieved in a 1.55 μm graded-index separate-confinement heterostructure and strained multi-quantum well AlInAs/AlGaInAs laser diode which was fabricated from epitaxial wafers grown by low-pressure organometallic vapour phase epitaxy. Remarkable improvements in threshold current, operating temperature and characteristic temperature have been demonstrated. The threshold current is 7 mA at 20°C, the emission wavelength is 1.5542 μm and the characteristic temperature between 20 and 70°C is 84 K

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.55 micrometre; 1.5542 micrometre; 20 to 70 degC; 7 mA; AlInAs-AlGaInAs; characteristic temperature; emission wavelength; epitaxial wafers; graded-index separate-confinement heterostructure; high temperature operation; low-pressure organometallic vapour phase epitaxy; operating temperature; strain-compensated multiple quantum well laser diodes; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19981256

Filename

715282