Wordline voltage generating system for low-power low-voltage flash memories

Author

Tanzawa, Toru ; Umezawa, Akira ; Kuriyama, Masao ; Taura, Tadayuki ; Banba, Hironori ; Miyaba, Takeshi ; Shiga, Hitoshi ; Takano, Yoshinori ; Atsumi, Shigeru

Author_Institution

Toshiba Corp., Yokohama, Japan

Volume

36

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

55

Lastpage

63

Abstract

A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-μm flash memory process and achieved with very low stand-by current of 2 μA typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed

Keywords

flash memories; high-speed integrated circuits; low-power electronics; pulse generators; reference circuits; 0.25 micron; 1.8 V; 2 muA; 25 MHz; 32 Mbit; band-gap reference; high-speed switching; low-power electronics; low-voltage flash memories; low-voltage level shifter; operating frequency; operation current; read operation; stand-by wordline voltage generator; wordline voltage generating system; Boosting; Charge pumps; Circuits; Detectors; Flash memory; Frequency; Low voltage; Photonic band gap; Power generation; Resistors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.896229

Filename

896229