DocumentCode
1427561
Title
Effects of thermal treatment in ITO/GaAs contacts
Author
Salehi, A.
Author_Institution
Dept. of Electr. Eng., K.N. Toosi Univ. of Technol., Tehran, Iran
Volume
34
Issue
17
fYear
1998
fDate
8/20/1998 12:00:00 AM
Firstpage
1697
Lastpage
1699
Abstract
Thermal stressing of thermally evaporated ITO/GaAs Schottky contacts annealed in flowing nitrogen is reported. It has been found that the barrier height of the annealed ITO/GaAs contacts increases from an initial value of 0.78 to 0.85 eV with an annealing temperature of 300°C. Experimental results show that the interface in ITO/GaAs is highly stable with no degradation up to 400°C
Keywords
III-V semiconductors; Schottky barriers; annealing; gallium arsenide; indium compounds; optoelectronic devices; semiconductor materials; tin compounds; 0.78 to 0.85 eV; 300 C; 400 C; ITO-GaAs; ITO/GaAs contacts; InSnO-GaAs; annealing; barrier height; flowing nitrogen; highly stable interface; thermal treatment; thermally evaporated Schottky contacts; transparent electrode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981133
Filename
715303
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