Title :
Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates
Author :
Dyakonova, N. ; Dickens, A. ; Shur, M.S. ; Gaska, R.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
8/20/1998 12:00:00 AM
Abstract :
The authors report on the impact ionisation in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire substrates. The measured characteristic electric field of the impact ionisation is ~2.8-3.15 MV/cm at room temperature. This result is in good agreement with the theoretical predictions for the breakdown field in GaN and with recent results for AlGaN-GaN HFETs on 6H-SiC substrates
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; impact ionisation; sapphire; Al2O3; AlGaN-GaN; AlGaN-GaN HFETs; breakdown field; characteristic electric field; heterostructure FET; heterostructure field effect transistors; impact ionisation; sapphire substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981174
