• DocumentCode
    1427566
  • Title

    Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates

  • Author

    Dyakonova, N. ; Dickens, A. ; Shur, M.S. ; Gaska, R.

  • Author_Institution
    Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    34
  • Issue
    17
  • fYear
    1998
  • fDate
    8/20/1998 12:00:00 AM
  • Firstpage
    1699
  • Lastpage
    1700
  • Abstract
    The authors report on the impact ionisation in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire substrates. The measured characteristic electric field of the impact ionisation is ~2.8-3.15 MV/cm at room temperature. This result is in good agreement with the theoretical predictions for the breakdown field in GaN and with recent results for AlGaN-GaN HFETs on 6H-SiC substrates
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; impact ionisation; sapphire; Al2O3; AlGaN-GaN; AlGaN-GaN HFETs; breakdown field; characteristic electric field; heterostructure FET; heterostructure field effect transistors; impact ionisation; sapphire substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981174
  • Filename
    715304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427566