• DocumentCode
    1427570
  • Title

    An electric analog of power transistor heat flow

  • Author

    Reese, James ; Grannemann, W. W. ; Durant, J. R.

  • Author_Institution
    University of New Mexico, Albuquerque, N. Mex.
  • Volume
    79
  • Issue
    4
  • fYear
    1960
  • fDate
    4/1/1960 12:00:00 AM
  • Firstpage
    297
  • Lastpage
    297
  • Abstract
    IN THE DESIGN of circuits utilizing power transistors, the maximum allowable instantaneous junction temperature is often the major limitation on the power-carrying capabilities of the circuit. Transistor failure may result if the junction temperature exceeds, even momentarily, a certain maximum value.
  • Keywords
    Crystals; Junctions; Mathematical model; Power transistors; Resistance heating; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineering
  • Publisher
    ieee
  • ISSN
    0095-9197
  • Type

    jour

  • DOI
    10.1109/EE.1960.6433161
  • Filename
    6433161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427570