Title :
An electric analog of power transistor heat flow
Author :
Reese, James ; Grannemann, W. W. ; Durant, J. R.
Author_Institution :
University of New Mexico, Albuquerque, N. Mex.
fDate :
4/1/1960 12:00:00 AM
Abstract :
IN THE DESIGN of circuits utilizing power transistors, the maximum allowable instantaneous junction temperature is often the major limitation on the power-carrying capabilities of the circuit. Transistor failure may result if the junction temperature exceeds, even momentarily, a certain maximum value.
Keywords :
Crystals; Junctions; Mathematical model; Power transistors; Resistance heating; Transistors;
Journal_Title :
Electrical Engineering
DOI :
10.1109/EE.1960.6433161
