DocumentCode :
1427571
Title :
Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons
Author :
Matine, N. ; Dvorak, M.W. ; Bolognesi, C.R. ; Xu, X. ; Hu, J. ; Watkins, S.P. ; Thewalt, M.L.W.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Volume :
34
Issue :
17
fYear :
1998
fDate :
8/20/1998 12:00:00 AM
Firstpage :
1700
Lastpage :
1702
Abstract :
Near-ideal abrupt heterojunction InP-GaAsSb-InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge. Resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively. Also a very low collector offset voltage VCE,OFF=14 mV was measured for 5×12 μm2 self-aligned DHBTs
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; GaAsSb conduction band edge; InP/GaAsSb/InP DHBT; ballistically launched collector electrons; double heterojunction bipolar transistors; near-ideal abrupt heterojunction;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981160
Filename :
715305
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1427571
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