Title :
Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 μm InAlAs/InGaAs HEMTs
Author :
Chertouk, M. ; Steinhagen, F. ; Massler, H. ; Haydl, W.H. ; Kohler, K. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
8/20/1998 12:00:00 AM
Abstract :
A 0.15 μm high gain, passivated, double-side-doped InAlAs/InGaAs HEMT with high uniformity over 2 inch InP substrates has been developed. A measured gain of 12.5 dB at 94 GHz was achieved at a drain bias of 2 V, giving an fmax exceeding 400 GHz. This high gain is mainly related to the extremely low gate-drain feedback capacitance, for which the physical origins are demonstrated. Using this technology, a single stage amplifier with 10.3 dB gain at 88 GHz and a distributed amplifier with 11 dB gain and 89 GHz bandwidth were fabricated
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; capacitance; distributed amplifiers; feedback; field effect MIMIC; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit technology; millimetre wave amplifiers; millimetre wave field effect transistors; passivation; 0.15 micron; 10.3 to 12.5 dB; 2 V; 88 to 400 GHz; EHF; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; InP; InP substrates; MM-wave ICs; W-band; distributed amplifier; double-side-doped HEMT; high gain type; optimised gate-drain feedback capacitance; passivated device; single stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981209
