• DocumentCode
    1427642
  • Title

    Analytical expressions for the static characteristic of the tunnel diode

  • Author

    Beddoes, M.P.

  • Volume
    111
  • Issue
    1
  • fYear
    1964
  • fDate
    1/1/1964 12:00:00 AM
  • Firstpage
    67
  • Lastpage
    72
  • Abstract
    The problem of obtaining an analytical expression for the tunnel-diode static characteristic is best approached using essentially a curve-matching technique. Two types of expressions are possible: (a) a simple expression (one or two terms only) which can be used in analytical studies (b) a complex expression suitable for computer manipulation. The error can be held to ±10% of the peak current using the type (a) approach, and details are given. Greater accuracy is possible with the type (b) approach, and examples are given in which a ±2% error is obtained using a ninth-order polynomial for a gallium arsenide diode; an error of ±5% is obtained using a seventh-order polynomial for a germanium diode. Using a reduction method and the type (b) expression, it is shown that representation of the static characteristics up to the valley voltage is possible using a quartic expression, the error being ±10%. This result is important in view of the number of attempts which have been made to achieve a match with a low-order polynomial. The quartic expression can be derived directly using Lagrange´s interpolation formula. The error from the type (a) approach is small, and it is expected that this approach will be entirely adequate for the solution of engineering problems.
  • Keywords
    circuit theory; equivalent circuits; semiconductor diodes; tunnel diodes;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1964.0010
  • Filename
    5250249