A reverse-voltage protection circuit for MOSFET power switches

Author

Hong, Hao-Ping ; Wu, Jiin-Chuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

36

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

152

Lastpage

155

Abstract

When MOSFET is used as a power switch, it is essential to prevent reverse current flow through the parasitic body diodes under reverse voltage condition. A new built-in reverse voltage protection circuit for MOSFETs has been developed. In this design, an area-efficient circuit is used to automatically select the proper well bias voltage to prevent reverse current under the reverse-voltage condition. This built-in reverse protection circuit has been successfully implemented in a high-side power switch application using a 0.6-μm CMOS process. The die area of the protection circuit is only 2.63% of that of a MOSFET. The latch-up immunity is greater than +12 V and -10 V in voltage triggering mode, and greater than ±500 mA in current triggering mode. The protection circuit is not in series with the MOSFET switch, so that the full output swing and high power efficiency are achieved

Keywords

field effect transistor switches; power MOSFET; protection; 0.6 micron; CMOS process; MOSFET power switch; built-in reverse-voltage protection circuit; current triggering mode; latch-up immunity; output swing; power efficiency; voltage triggering mode; CMOS process; Diodes; Electrostatic discharge; Firewire; MOSFET circuits; Power MOSFET; Protection; Switches; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.896242

Filename

896242