Title :
Efficient generation of pre-silicon MOS model parameters for early circuit design
Author :
Orshansky, Michael ; An, Judy ; Jiang, Chun ; Liu, Bill ; Riccobene, Concetta ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
1/1/2001 12:00:00 AM
Abstract :
The technology development cycle continues to shrink, which very often requires evaluation of circuit design and technology choices using circuit simulators at the time when no real silicon is available. In this paper, we present an efficient methodology for generating pre-silicon device models for advanced CMOS processes. The methodology allows accurate prediction of the full MOS I-V characteristics for the future technologies combining a constraint backpropagation algorithm based upon a few critical specifications, physical models for the advanced device phenomena, and the empirical data from devices of an existing technology. The methodology has been tested on two CMOS production technologies. Good prediction results are achieved: for nMOS the rms error is 1%-2%, for pMOS it is 2%-4%
Keywords :
CMOS integrated circuits; circuit CAD; circuit simulation; digital simulation; integrated circuit design; integrated circuit modelling; CMOS production technologies; advanced CMOS processes; circuit design; circuit simulators; constraint backpropagation algorithm; full MOS I-V characteristics; pMOS; physical models; pre-silicon MOS model parameters; rms error; technology development cycle; Backpropagation algorithms; CMOS process; CMOS technology; Circuit simulation; Circuit synthesis; Predictive models; Production; Semiconductor device modeling; Silicon; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
