Title :
Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers
Author :
Larson, Michael C. ; Coldren, C.W. ; Spruytte, S.G. ; Petersen, H.E. ; Harris, J.S.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 μm and grown all-epitaxially in a single step on a GaAs substrate. Oxide-apertured devices demonstrated CW threshold currents as low as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices exhibited a pulsed threshold current density of 2-2.5 kA/cm2 and slope efficiency above 0.09 W/A.
Keywords :
III-V semiconductors; current density; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; optical fibre communication; optical transmitters; quantum well lasers; surface emitting lasers; 1 mA; 1.2 mum; 298 K; CW threshold currents; GaAs; GaAs substrate; GaInNAs; all-epitaxial growth; larger sized devices; long wavelength vertical cavity lasers; low-threshold oxide-confined GaInNAs; oxide-apertured devices; pulsed threshold current density; room temperature continuous-wave operation; single step growth; slope efficiency; thermal impedance; vertical-cavity surface-emitting laser diodes; Apertures; Distributed Bragg reflectors; Etching; Fiber lasers; Gallium arsenide; Mirrors; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
