Title :
Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells
Author :
Boeve, H. ; Das, J. ; Bruynseraede, C. ; De Boeck, J. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
9/3/1998 12:00:00 AM
Abstract :
An array of magnetic memory cells, each consisting of a spin-valve structure in series with a GaAs diode, is demonstrated. Bit-addressability in the matrix, based on a DRAM-like floor plan, is proved for both write and read operations using a coincident current scheme. By implementing a series diode in the memory cell, read signals up to 10 mV were measured
Keywords :
giant magnetoresistance; magnetic storage; magnetoresistive devices; random-access storage; semiconductor diodes; 10 mV; GaAs; GaAs diode; MRAM; bit addressability; coincident current; giant magnetoresistance; magnetic memory cell array; magnetoresistive random access memory; spin valve;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981250
