Title :
210 GHz tripler with monolithically integrated single barrier varactors
Author :
Meola, K. ; Freyer, J.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Electronik, Tech. Univ. Munchen, Germany
fDate :
9/3/1998 12:00:00 AM
Abstract :
A monolithically integrated frequency tripler on semi-insulating GaAs substrate for 210 GHz output frequency is presented. The measured conversion efficiency using an optimised structure GaAs/GaAlAs single barrier varactor is 2.8% at an output power of 1.4 mW
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; millimetre wave frequency convertors; varactors; 1.4 mW; 2.8 percent; 210 GHz; GaAs; GaAs-GaAlAs; GaAs/GaAlAs single barrier varactor; conversion efficiency; frequency tripler; monolithic integration; output power; semi-insulating GaAs substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981699
