DocumentCode :
1428092
Title :
Influence of GaSb and AlGaInAsSb as Barrier Material on 
2.8- 
m GaSb-Based Diode Laser P
Author :
Lehnhardt, T. ; Herrmann, A. ; Kamp, M. ; Höfling, S. ; Worschech, L. ; Forchel, A.
Author_Institution :
Wilhelm-Conrad-Rontgen-Res. Center for Complex Mater. Syst., Univ. of Wurzburg, Wurzburg, Germany
Volume :
23
Issue :
6
fYear :
2011
fDate :
3/15/2011 12:00:00 AM
Firstpage :
371
Lastpage :
373
Abstract :
GaSb-based diode lasers emitting at a wavelength of 2.8 μm have been grown. The devices feature GaSb or Al0.21 Ga0.58 In0.21 As0.20 Sb0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the laser light, the optical properties and the impact on device performance have been determined. The refractive index for Al0.21Ga0.58In0.21As0.20Sb0.80 has been estimated to be 3.26.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; refractive index; semiconductor quantum wells; AlGaInAsSb; GaSb; barrier material; diode laser; internal absorption; modal gain; quantum wells; refractive index; transparency current density; wavelength 2.8 mum; AlGaInAsSb; antimonide-based lasers; gas sensing; midinfrared lasers; quantum-well (QW) lasers; quinternary barrier; refractive index; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2106487
Filename :
5688437
Link To Document :
