Title :
Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe
Author :
Mendez-Garcia, V.H. ; Lopez-Lopez, M.
Author_Institution :
Dept. de Fisica, Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico
fDate :
9/3/1998 12:00:00 AM
Abstract :
The authors have achieved a substantial improvement in the ZnSe molecular beam epitaxy of Si(111) by irradiating the substrate surface with a flux of nitrogen free radicals (N*) prior to growth. This new substrate treatment induced an initial two-dimensional growth as revealed by reflection high-energy electron diffraction, Auger electron spectroscopy, and atomic force microscopy. The improved epitaxy was confirmed by high resolution X-ray diffraction
Keywords :
zinc compounds; Auger electron spectroscopy; N; RHEED; Si; Si substrate treatment; Si(111); ZnSe MBE growth; ZnSe-Si; atomic force microscopy; epitaxy improvement; high resolution X-ray diffraction; molecular beam epitaxial growth; nitrogen free radicals; reflection high-energy electron diffraction; substrate surface irradiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981218
