DocumentCode :
1428140
Title :
Ultra-high sensitivity InGaAs/AlGaAs/InGaAs triple-coupled quantum well infrared photodetector
Author :
Chiang, J.C. ; Li, S.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
34
Issue :
18
fYear :
1998
fDate :
9/3/1998 12:00:00 AM
Firstpage :
1794
Lastpage :
1795
Abstract :
An ultra-high sensitivity triple-coupled quantum well infrared photodetector using a high-strain n-type InGaAs/AlGaAs/InGaAs asymmetrical coupled quantum well structure has been developed for 8-14 μm detection. The maximum responsivity and detectivity with 45° facet illumination were found to be 2.71 A/W and 2.21×1010 cmHz12/W at λp=9.6 μm, Vb =5 V, and T=30 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum wells; sensitivity; -5 V; 30 K; 8 to 14 micron; GaAs; GaAs substrate; InGaAs-AlGaAs-InGaAs; asymmetrical coupled QW structure; high-strain n-type; infrared photodetector; triple-coupled QW IR photodetector; triple-coupled quantum well; ultra-high sensitivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981253
Filename :
715396
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1428140
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