• DocumentCode
    1428140
  • Title

    Ultra-high sensitivity InGaAs/AlGaAs/InGaAs triple-coupled quantum well infrared photodetector

  • Author

    Chiang, J.C. ; Li, S.S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1794
  • Lastpage
    1795
  • Abstract
    An ultra-high sensitivity triple-coupled quantum well infrared photodetector using a high-strain n-type InGaAs/AlGaAs/InGaAs asymmetrical coupled quantum well structure has been developed for 8-14 μm detection. The maximum responsivity and detectivity with 45° facet illumination were found to be 2.71 A/W and 2.21×1010 cmHz12/W at λp=9.6 μm, Vb =5 V, and T=30 K
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum wells; sensitivity; -5 V; 30 K; 8 to 14 micron; GaAs; GaAs substrate; InGaAs-AlGaAs-InGaAs; asymmetrical coupled QW structure; high-strain n-type; infrared photodetector; triple-coupled QW IR photodetector; triple-coupled quantum well; ultra-high sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981253
  • Filename
    715396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1428140