Title :
A digitally compensated 1.5 GHz CMOS/FBAR frequency reference
Author :
Rai, Shailesh ; Su, Ying ; Pang, Wei ; Ruby, Richard ; Otis, Brian
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
fDate :
3/1/2010 12:00:00 AM
Abstract :
A temperature-compensated 1.5 GHz film bulk acoustic wave resonator (FBAR)-based frequency reference implemented in a 0.35 ??m CMOS process is presented. The ultra-small form factor (0.79 mm ?? 1.72 mm) and low power dissipation (515 ??A with 2 V supply) of a compensated FBAR oscillator present a promising alternative for the replacement of quartz crystal frequency references. The measured post-compensation frequency drift over a 0-100??C temperature range is <??10 ppm. The measured oscillator phase noise is -133 dBc/ Hz at 100 kHz offset from the 1.5 GHz carrier.
Keywords :
CMOS integrated circuits; UHF oscillators; bulk acoustic wave devices; phase noise; resonators; CMOS-FBAR frequency reference; compensated FBAR oscillator; current 515 muA; film bulk acoustic wave resonator-based frequency reference; frequency 1.5 GHz; frequency 100 MHz; oscillator phase noise; post-compensation frequency drift; power dissipation; quartz crystal frequency references; size 0.35 mum; size 0.79 mm; size 1.72 mm; temperature 0 degC to 100 degC; voltage 2 V; Acoustic waves; CMOS process; Film bulk acoustic resonators; Frequency measurement; Noise measurement; Oscillators; Phase measurement; Power dissipation; Resonant frequency; Temperature distribution;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2010.1447
