DocumentCode :
1428351
Title :
Contamination-insensitive differential capacitive pressure sensors
Author :
Wang, ChuanChe ; Gogoi, Bishnu P. ; Monk, David J. ; Mastrangelo, Carlos H.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
9
Issue :
4
fYear :
2000
Firstpage :
538
Lastpage :
543
Abstract :
In this paper, a contamination-insensitive differential capacitive pressure sensor with a sealed gap is presented. This device is made of three polysilicon layers including a stationary middle plate and the top and bottom plates that are rigidly coupled together by a series of posts hence deflecting in tandem by a change in differential or gauge pressure. Because of the posts, however, the device is insensitive to common-mode pressure. As the differential pressure is changed from -70 to 70 kPa, the capacitance between the bottom and middle plates changes by 73 fF (sensitivity of approximately 0.5 fF/kPa), yet there is only a 2-fF change in output when the common-mode pressure is changed from 30 to 200 kPa. The devices have a linearity error on the order of -15% FSS and a temperature coefficient of offset of 170 ppm//spl deg/C.
Keywords :
capacitive sensors; elemental semiconductors; micromachining; microsensors; pressure sensors; silicon; -70 to 70 kPa; 30 to 200 kPa; common-mode pressure; contamination-insensitive differential capacitive pressure sensor; gauge pressure; linearity error; polysilicon layers; sensitivity; temperature coefficient of offset; Capacitance; Capacitive sensors; Capacitors; Contamination; Electrodes; Frequency selective surfaces; Linearity; Sensor phenomena and characterization; Silicon; Temperature sensors;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.896776
Filename :
896776
Link To Document :
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