A p-channel BICFET in the InGaAs/InAlAs material system

Author

Lebby, M.S. ; Taylor, Geoffrey W. ; Izabelle, A. ; Tell, B. ; Brown-Goebeler, K. ; Chang, Tao-Yuan ; Simmons, J.G.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

278

Lastpage

280

Abstract

The bipolar inversion-channel field-effect transistor (BICFET) relies on a field-effect mechanism to induce and modulate an inversion layer placed at the heterojunction interface. The device was fabricated using molecular beam epitaxy. A current gain of approximately 15 has been achieved at a current density J of approximately 8*10/sup 3/ A/cm/sup 2/ at 300 K. At 77 K, the gain rises to 40 with J=2*10/sup 4/ A/cm/sup 2/. This gain, which follows theoretical predictions, continuously increases with collector current and is limited only by the amount of heat generated in a large-area device. Because of its potential for ballistic transport in the collector, the InGaAs/InAlAs BICFET should be very attractive for high-speed applications.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; 300 K; 77 K; BICFET; InGaAs-InAlAs; MBE; ballistic transport; bipolar inversion-channel field-effect transistor; collector current; current density; current gain; field-effect mechanism; heterojunction interface; inversion layer modulation; large-area device; molecular beam epitaxy; p-channel; semiconductors; Electron mobility; FETs; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.716

Filename

716