Title :
A p-channel BICFET in the InGaAs/InAlAs material system
Author :
Lebby, M.S. ; Taylor, Geoffrey W. ; Izabelle, A. ; Tell, B. ; Brown-Goebeler, K. ; Chang, Tao-Yuan ; Simmons, J.G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
The bipolar inversion-channel field-effect transistor (BICFET) relies on a field-effect mechanism to induce and modulate an inversion layer placed at the heterojunction interface. The device was fabricated using molecular beam epitaxy. A current gain of approximately 15 has been achieved at a current density J of approximately 8*10/sup 3/ A/cm/sup 2/ at 300 K. At 77 K, the gain rises to 40 with J=2*10/sup 4/ A/cm/sup 2/. This gain, which follows theoretical predictions, continuously increases with collector current and is limited only by the amount of heat generated in a large-area device. Because of its potential for ballistic transport in the collector, the InGaAs/InAlAs BICFET should be very attractive for high-speed applications.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; 300 K; 77 K; BICFET; InGaAs-InAlAs; MBE; ballistic transport; bipolar inversion-channel field-effect transistor; collector current; current density; current gain; field-effect mechanism; heterojunction interface; inversion layer modulation; large-area device; molecular beam epitaxy; p-channel; semiconductors; Electron mobility; FETs; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Substrates;
Journal_Title :
Electron Device Letters, IEEE
