Title :
High-Power Optically Pumped Semiconductor Laser at 1040 nm
Author :
Wang, Tsuei-Lian ; Kaneda, Yushi ; Yarborough, J.M. ; Hader, Jörg ; Moloney, Jerome V. ; Chernikov, Alexej ; Chatterjee, Sangam ; Koch, Stephan W. ; Kunert, Bernardette ; Stolz, Wolfgang
Author_Institution :
Univ. of Arizona, Tucson, AZ, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
We demonstrate near-diffraction limited (M 2 ?? 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; light diffraction; optical pumping; photoluminescence; semiconductor lasers; GaAs-AlAs; effective gain enhancement; epitaxial growth; optically pumped semiconductor laser; power 40.7 W; temperature dependent photoluminescence; wavelength 1040 nm; Micro-cavity resonance; optically pumped semiconductor laser (OPSL); power scaling;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2043731
