DocumentCode
1429206
Title
Next-Generation CMOS RF Power Amplifiers
Author
Hajimiri, Ali
Author_Institution
The Thomas G. Myers professor of electrical engineering at the California Institute of Technology (Caltech) and director of the Microelectronics Laboratory.
Volume
12
Issue
1
fYear
2011
Firstpage
38
Lastpage
45
Abstract
Ten years ago, it was widely accepted conventional wisdom that wattlevel fully integrated power amplifiers (PAs) were not feasible in standard complimentary metal-oxide-semiconductor (CMOS) technology. Today millions of such devices are commercially produced and shipped every month and are used in hundreds of millions of cellular phones across the world. Such dramatic transition from being considered an impossibility even by most optimistic academics to the obvious future direction to be followed by everyone happened through a series of demonstrations based on new architectures radically different from the known PA topologies applied over more than half a century.
Keywords
CMOS integrated circuits; mobile handsets; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; CMOS RF power amplifiers; cellular phones; radiofrequency integrated circuits; Amplifiers; CMOS integrated circuits; Impedance; Inductors; Power amplifiers; Radio frequency; Transistors;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2010.939321
Filename
5691059
Link To Document