• DocumentCode
    1429206
  • Title

    Next-Generation CMOS RF Power Amplifiers

  • Author

    Hajimiri, Ali

  • Author_Institution
    The Thomas G. Myers professor of electrical engineering at the California Institute of Technology (Caltech) and director of the Microelectronics Laboratory.
  • Volume
    12
  • Issue
    1
  • fYear
    2011
  • Firstpage
    38
  • Lastpage
    45
  • Abstract
    Ten years ago, it was widely accepted conventional wisdom that wattlevel fully integrated power amplifiers (PAs) were not feasible in standard complimentary metal-oxide-semiconductor (CMOS) technology. Today millions of such devices are commercially produced and shipped every month and are used in hundreds of millions of cellular phones across the world. Such dramatic transition from being considered an impossibility even by most optimistic academics to the obvious future direction to be followed by everyone happened through a series of demonstrations based on new architectures radically different from the known PA topologies applied over more than half a century.
  • Keywords
    CMOS integrated circuits; mobile handsets; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; CMOS RF power amplifiers; cellular phones; radiofrequency integrated circuits; Amplifiers; CMOS integrated circuits; Impedance; Inductors; Power amplifiers; Radio frequency; Transistors;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2010.939321
  • Filename
    5691059