Title :
The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String
Author :
Kang, Myounggon ; Lee, Kyunghwan ; Chae, Dong Hyuk ; Park, Byung-Gook ; Shin, Hyungcheol
Author_Institution :
Inter-Univ. Semicond. Res. Center, Nat. Univ., Seoul, South Korea
fDate :
3/1/2012 12:00:00 AM
Abstract :
This letter presents a compact model of nand Flash strings in which complex characteristics of scaled-down Flash cells can be captured very accurately through simple circuit simulation. Different from previous modeling studies, the proposed model has detailed physical descriptions for channel potential of Flash cell so that various program disturbances due to leakages in nand string can be easily analyzed. The compact model of channel potential is fully compatible with BSIM4 SPICE model. By applying compact model to the 30-nm nand product, many phenomena in the device were realized with more than 95% accuracy at the expense of only a few minutes.
Keywords :
NAND circuits; circuit simulation; flash memories; integrated circuit modelling; BSIM4 SPICE model; NAND flash cell string; channel potential; circuit simulation; program disturbances; size 30 nm; Boosting; Electric potential; Electron devices; Flash memory; IEEE Potentials; Integrated circuit modeling; Logic gates; BSIM4; channel potential; drain-induced barrier lowering (DIBL); gate-induced drain leakage (GIDL); junction leakage; nand Flash; nand string;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2179283
