Through-Silicon Vias Filled With Densified and Transferred Carbon Nanotube Forests

Author

Wang, Teng ; Chen, Si ; Jiang, Di ; Fu, Yifeng ; Jeppson, Kjell ; Ye, Lilei ; Liu, Johan

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

420

Lastpage

422

Abstract

Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200 instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.

Keywords

CMOS integrated circuits; carbon nanotubes; integrated circuit packaging; semiconductor growth; three-dimensional integrated circuits; C; CMOS compatibility; CNT packaging; TSV; as-grown undensified CNT forest; densified CNT forest; densified carbon nanotube forest; direct CNT forest growth; magnitude reduction; postgrowth low-temperature transfer process; through-silicon vias; transferred CNT forest; transferred carbon nanotube forest; vapor densification method; Carbon nanotubes; Fabrication; Plasma temperature; Scanning electron microscopy; Silicon; System-on-a-chip; Through-silicon vias; Carbon nanotubes (CNTs); densification; interconnects; through-silicon vias (TSVs); transfer;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2177804

Filename

6138280