DocumentCode
1429789
Title
Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature
Author
Steinle, G. ; Riechert, H. ; Egorov, A.Yu.
Author_Institution
Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany
Volume
37
Issue
2
fYear
2001
fDate
1/18/2001 12:00:00 AM
Firstpage
93
Lastpage
95
Abstract
The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region. Emitting above 1.28 μm with record characteristics. The CW output power at room temperature exceeds 500 μW with an initial slope efficiency of 0.17 W/A
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; semiconductor lasers; surface emitting lasers; 1.28 mum; 298 K; 500 muW; CW output power; GaAs; GaAs substrate; InGaAsN; InGaAsN active region; electrically pumped MBE-grown VCSELs; initial slope efficiency; monolithic VCSEL; record characteristics; room temperature; vertical cavity surface emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010098
Filename
898277
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