DocumentCode :
1429940
Title :
High cooling power density SiGe/Si microcoolers
Author :
Fan, Xiaodan ; Zeng, Gang ; LaBounty, C. ; Vashaee, Daryoosh ; Shakouri, Ali ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume :
37
Issue :
2
fYear :
2001
fDate :
1/18/2001 12:00:00 AM
Firstpage :
126
Lastpage :
127
Abstract :
SiGe/Si superlattice micro-coolers are investigated experimentally. They can be monolithically integrated with Si-based microelectronic devices to achieve localised cooling and temperature control. Cooling by as much as 4.2 K at 25°C and 12 K at 200°C was measured on 3 μm thick. 60×60 μm2 devices. This corresponds to maximum cooling power densities approaching kW/cm 2
Keywords :
Ge-Si alloys; cooling; elemental semiconductors; integrated circuit packaging; semiconductor materials; semiconductor superlattices; silicon; 3 micron; SiGe-Si; cooling power densities; localised cooling; microcoolers; temperature control;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010096
Filename :
898299
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1429940
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