• DocumentCode
    1429940
  • Title

    High cooling power density SiGe/Si microcoolers

  • Author

    Fan, Xiaodan ; Zeng, Gang ; LaBounty, C. ; Vashaee, Daryoosh ; Shakouri, Ali ; Bowers, John E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
  • Volume
    37
  • Issue
    2
  • fYear
    2001
  • fDate
    1/18/2001 12:00:00 AM
  • Firstpage
    126
  • Lastpage
    127
  • Abstract
    SiGe/Si superlattice micro-coolers are investigated experimentally. They can be monolithically integrated with Si-based microelectronic devices to achieve localised cooling and temperature control. Cooling by as much as 4.2 K at 25°C and 12 K at 200°C was measured on 3 μm thick. 60×60 μm2 devices. This corresponds to maximum cooling power densities approaching kW/cm 2
  • Keywords
    Ge-Si alloys; cooling; elemental semiconductors; integrated circuit packaging; semiconductor materials; semiconductor superlattices; silicon; 3 micron; SiGe-Si; cooling power densities; localised cooling; microcoolers; temperature control;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010096
  • Filename
    898299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1429940