Title :
Low level and reflection phase noise measurements on a FET
Author :
Llopis, O. ; Juraver, J.B. ; Cibiel, G. ; Graffeuil, J.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
1/18/2001 12:00:00 AM
Abstract :
The residual phase noise of a PHEMT device is studied in two unusual configurations: in transmission mode with a low input microwave power on the device, and in reflection mode. Measurements clearly reveal some fundamental aspects of the phase noise generation in this device: the phase noise is a modulation mechanism which still exists in the linear regime and in which the gate reactance fluctuations play an important role
Keywords :
high electron mobility transistors; microwave field effect transistors; microwave measurement; phase noise; semiconductor device measurement; PHEMT device; gate reactance fluctuations; linear regime; low input microwave power; modulation mechanism; reflection phase noise measurements; residual phase noise; transmission mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010081
