DocumentCode
1429954
Title
Low level and reflection phase noise measurements on a FET
Author
Llopis, O. ; Juraver, J.B. ; Cibiel, G. ; Graffeuil, J.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
37
Issue
2
fYear
2001
fDate
1/18/2001 12:00:00 AM
Firstpage
127
Lastpage
129
Abstract
The residual phase noise of a PHEMT device is studied in two unusual configurations: in transmission mode with a low input microwave power on the device, and in reflection mode. Measurements clearly reveal some fundamental aspects of the phase noise generation in this device: the phase noise is a modulation mechanism which still exists in the linear regime and in which the gate reactance fluctuations play an important role
Keywords
high electron mobility transistors; microwave field effect transistors; microwave measurement; phase noise; semiconductor device measurement; PHEMT device; gate reactance fluctuations; linear regime; low input microwave power; modulation mechanism; reflection phase noise measurements; residual phase noise; transmission mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010081
Filename
898300
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