• DocumentCode
    1429960
  • Title

    Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

  • Author

    Akiyama, T. ; Georgiev, N. ; Mozume, T. ; Yoshida, H. ; Gopal, A. Venu ; Wada, O.

  • Author_Institution
    Femtosecond Technol. Res. Assoc., Tsukuba, Japan
  • Volume
    37
  • Issue
    2
  • fYear
    2001
  • fDate
    1/18/2001 12:00:00 AM
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    Values for the nonlinearity and recovery time of 1.5 μm intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (χ(3)) has been evaluated to be 5.8×10-17m2/V2. An ultrafast recovery time (τ) of ~685 fs has been obtained while keeping the figure of merit (χ(3)/ατ) as large as those of interband transitions
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; nonlinear optical susceptibility; semiconductor quantum wells; 1.55 micrometre; 685 fs; III-V semiconductors; InGaAs-AlAs-AlAsSb; coupled quantum wells; figure of merit; intersubband absorption; nonlinearity; recovery time; third-order susceptibility; ultrafast recovery time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010087
  • Filename
    898301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1429960