DocumentCode :
1429960
Title :
Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
Author :
Akiyama, T. ; Georgiev, N. ; Mozume, T. ; Yoshida, H. ; Gopal, A. Venu ; Wada, O.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Volume :
37
Issue :
2
fYear :
2001
fDate :
1/18/2001 12:00:00 AM
Firstpage :
129
Lastpage :
130
Abstract :
Values for the nonlinearity and recovery time of 1.5 μm intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (χ(3)) has been evaluated to be 5.8×10-17m2/V2. An ultrafast recovery time (τ) of ~685 fs has been obtained while keeping the figure of merit (χ(3)/ατ) as large as those of interband transitions
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; nonlinear optical susceptibility; semiconductor quantum wells; 1.55 micrometre; 685 fs; III-V semiconductors; InGaAs-AlAs-AlAsSb; coupled quantum wells; figure of merit; intersubband absorption; nonlinearity; recovery time; third-order susceptibility; ultrafast recovery time;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010087
Filename :
898301
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1429960
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