Title :
Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation
Author :
Lee, Jong-Soo ; Vescan, A. ; Wieszt, A. ; Dietrich, R. ; Leier, H. ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
1/18/2001 12:00:00 AM
Abstract :
Small signal S-parameters and loadpull measurements are reported for AlGaN/GaN HEMT devices with 200 nm SiN passivation. The maximum output power increases from 0.59 W/mm to 1.45 W/mm and the efficiency is also enhanced from 16 to 27% for 2×50 μm HEMT devices after SiN passivation. Small signal equivalent circuit parameters including parasitic and intrinsic parameters have been extracted from the measured S-parameters and are used to explain the effect of SiN on the power characteristics
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; microwave field effect transistors; microwave measurement; passivation; power HEMT; semiconductor device measurement; 200 nm; 27 percent; 50 micron; AlGaN-GaN; HEMT; III-V semiconductors; S-parameters; SiN; equivalent circuit parameters; intrinsic parameters; loadpull measurements; maximum output power; parasitic parameters; passivation; power measurements; small signal measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010100
