DocumentCode :
1429969
Title :
Alpha-particle-induced effects in partially depleted silicon on insulator device: With and without body contact
Author :
Rathod, S.S. ; Saxena, Alok Kumar ; Dasgupta, S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Indian Inst. of Technol., Roorkee, India
Volume :
5
Issue :
1
fYear :
2011
fDate :
1/1/2011 12:00:00 AM
Firstpage :
52
Lastpage :
58
Abstract :
With the continuous downscaling of CMOS technologies, reliability has become one of the major bottlenecks in the evolution of next generation systems. The radiation-induced soft errors have become one of the most important and challenging failure mechanisms in the modern semi-conductor devices. The authors present an in-depth analysis of alpha-particle-induced effects in deep submicron partially depleted silicon on insulator (PD-SOI) device. Device with body contact as well as device without body contact is analysed. The process and device simulations are done with the latest models. Electrical parameter extraction under different energies of an alpha particle is carried out.
Keywords :
CMOS integrated circuits; alpha-particle effects; failure analysis; semiconductor device reliability; semiconductor process modelling; silicon-on-insulator; CMOS technology; PD-SOI device; alpha-particle-induced effects; deep submicron partially depleted silicon on insulator device; device simulations; electrical parameter extraction; failure mechanisms; in-depth analysis; next generation systems; process simulation; radiation-induced soft errors; semiconductor devices;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2010.0080
Filename :
5692796
Link To Document :
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