Title :
InAs-based interband cascade lasers with emission wavelength at 10.4 μm
Author :
Tian, Zhao ; Li, Luoqing ; Ye, Hongxia ; Yang, R.Q. ; Mishima, T.D. ; Santos, M.B. ; Johnson, M.B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA
Abstract :
An InAs-based plasmon waveguide interband cascade laser has been demonstrated near 10.4 μm. The device operated at temperatures up to 166 and 190K in CW and pulsed modes, respectively. This device showed a threshold current density as low as 10 A/cm2 at 80K. Also, simultaneous lasing at dual wavelengths near 9.1 and 10.2 μm was observed from this device.
Keywords :
III-V semiconductors; current density; indium compounds; laser modes; plasmons; quantum cascade lasers; waveguide lasers; CW modes; InAs; emission wavelength; plasmon waveguide interband cascade laser; pulsed modes; simultaneous lasing; temperature 80 K; threshold current density; wavelength 10.4 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3555
