The effect of trench-gate-oxide structure on EPROM device operation

Author

Chu, Sam S D ; Steckl, Andrew J.

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

284

Lastpage

286

Abstract

A floating-gate erasable programmable read-only memory (EPROM) cell with a thin trench-gate-oxide (TGO) structure near the drain region was fabricated using electron-beam lithography technology. Several promising advantages were found for the TGO cell. The writing time was measured to be 100 faster than conventional devices of the same dimensions. Two-dimensional (2-D) simulation of the TGO structure indicated that longitudinal and transverse channel electric fields are generated which simultaneously increase the hot-electron population in the channel and the injection efficiency into the floating gate. The devices exhibit high-transconductance, fast programming, good-tolerance to unintentional writing during readout, and potential for flash-erase application.<>

Keywords

PROM; electron beam lithography; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; integrated memory circuits; semiconductor device models; 2D simulation; EPROM device operation; TGO; electron-beam lithography; erasable programmable read-only memory; fast programming; flash memory; flash-erase application; floating gate EPROM; good-tolerance; hot-electron population; injection efficiency; modelling; trench-gate-oxide structure; writing time; Doping; EPROM; Fabrication; Lithography; Nonvolatile memory; PROM; Systems engineering and theory; Time measurement; Two dimensional displays; Writing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.718

Filename

718