DocumentCode :
1430592
Title :
State of the art and future of electronic sources at terahertz frequencies
Author :
Eisele, H.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK
Volume :
46
Issue :
26
fYear :
2010
Abstract :
A review is presented of the state of the art of electronic sources based on semiconductor devices that have either demonstrated substantial amounts of output power or have a strong potential of producing significant output powers at frequencies above 300 GHz. Both fundamental sources and harmonic power generation using varactor or varistor diodes are discussed. The key devices are Schottky diodes, heterojunction barrier varactors, heterojunction bipolar transistors, high-electron mobility transistors, resonant tunnelling diodes, tunnel-injection transit-time devices, Gunn devices, and superlattice electron devices.
Keywords :
Schottky diodes; heterojunction bipolar transistors; high electron mobility transistors; submillimetre wave diodes; submillimetre wave transistors; terahertz wave devices; varactors; Gunn devices; Schottky diodes; electronic sources; harmonic power generation; heterojunction barrier varactors; heterojunction bipolar transistors; high-electron mobility transistors; resonant tunnelling diodes; semiconductor devices; superlattice electron devices; terahertz frequency; tunnel-injection transit-time devices; varactor; varistor diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.3319
Filename :
5692927
Link To Document :
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