Title :
The effect of substrate bias on the properties of NiO/NiFe and NiO/CoFe exchange biased spin-valve sensors
Author :
Li, Shuxiang ; Plaskett, T.S. ; Freitas, P.P. ; Bernardo, J. ; Almeida, B. ; Sousa, J.B.
Author_Institution :
INESC, Lisbon, Portugal
fDate :
9/1/1998 12:00:00 AM
Abstract :
The effect of substrate bias applied during the deposition of NiO on the properties of unshielded NiO/Ni81Fe19 and NiO/Co87Fe13 biased spin-valve sensors was investigated. The addition of substrate bias of -40 V increased the blocking temperature Tb from 100-190°C for NiO/NiFe biased spin valves, and from 70-190°C for NiO/CoFe biased spin valves. The thermal stability upon anneal increased with substrate bias from 150-200°C for NiO/NiFe biased spin-valve sensors, and from 200-280°C for NiO/CoFe biased spin-valve sensors. At an operating temperature of 80°C, sensor magnetoresistance decreases 15% from its room temperature value for NiO/CoFe sensors where NiO was deposited under -40 V bias. At this temperature, the sensor transfer curves are well linearized and Barkhausen noise free. NiO films prepared with varying substrate bias were examined by atomic force microscopy (AFM) and X-ray diffraction. Substrate bias decreases surface morphology and grain size of NiO, which probably contributes to the observed improvement of blocking temperature
Keywords :
X-ray diffraction; annealing; atomic force microscopy; cobalt alloys; exchange interactions (electron); iron alloys; magnetic sensors; magnetoresistive devices; nickel alloys; nickel compounds; thermal stability; -40 V; 70 to 280 C; Barkhausen noise; NiO deposition; NiO-Co87Fe13; NiO-Ni81Fe19; X-ray diffraction; annealing; atomic force microscopy; blocking temperature; exchange biased spin valve sensor; grain size; magnetoresistance; substrate bias; surface morphology; thermal stability; transfer curve; Annealing; Atomic force microscopy; Gas detectors; Iron; Magnetic sensors; Magnetoresistance; Spin valves; Temperature sensors; Thermal sensors; Thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on