Title :
Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O3-PZT thin films
Author :
Wasa, Kiyotaka ; Adachi, Hideaki ; Nishida, Ken ; Yamamoto, Takashi ; Matsushima, Tomoaki ; Kanno, Isaku ; Kotera, Hidetoshi
Author_Institution :
Dept. of Microeng., Kyoto Univ., Kyoto, Japan
fDate :
1/1/2012 12:00:00 AM
Abstract :
In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, xPb(Mn,Nb)O3-(1 - x)PZT, were grown on SrRuO3/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec >; 180 kV/cm, large remanent polarization, Pr = 100 μC/cm2, small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600°C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m2 for PZT(48/52) at x = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS.
Keywords :
Curie temperature; crystal microstructure; ferroelectric coercive field; ferroelectric thin films; lead compounds; micromechanical devices; quenching (thermal); remanence; sputter deposition; Curie temperature; PZT-based ternary ferroelectric perovskite; Pb(MnNb)O3-PZT; SrRuO3-Pt-MgO; bulk ferroelectric property; bulk-like large transverse piezoelectric constant; dielectric constant; high coercive field; highly polarized single-c-domain single-crystal thin film; magnetron sputtering; microstructure; piezoelectric MEMS; quenching; remanent polarization; sputtered unstrained thin film; Electrodes; Epitaxial growth; Lattices; Sputtering; Substrates; Voltage measurement;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2012.2150
