DocumentCode
1431288
Title
Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model
Author
Rao, Rathnamala ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Madras, Chennai, India
Volume
10
Issue
2
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
247
Lastpage
253
Abstract
An analytical threshold voltage model developed for a nonuniformly doped channel is used to study the random dopant fluctuation (RDF) effects in FD-SOI MOSFETs. RDF results in nonuniform doping in the channel, leading to deviation in the threshold voltage, which can be computed using this analytical model. The effect of device parameters on RDF-induced threshold voltage deviations is also investigated. For each study, a large sample size has been used. This has been possible owing to the computational efficiency of the analytical model. Studies on the threshold voltage variation due to combined effects of RDF and other device parameter fluctuations have also been carried out.
Keywords
MOSFET; semiconductor doping; silicon-on-insulator; FD-SOI MOSFET; analytical threshold voltage model; nonuniformly doped channel; random dopant fluctuation effects; Analytical model; FD-SOI MOSFET; nonuniform doping; random dopant fluctuation (RDF);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2010.2044180
Filename
5424001
Link To Document