DocumentCode :
1431288
Title :
Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model
Author :
Rao, Rathnamala ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Madras, Chennai, India
Volume :
10
Issue :
2
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
247
Lastpage :
253
Abstract :
An analytical threshold voltage model developed for a nonuniformly doped channel is used to study the random dopant fluctuation (RDF) effects in FD-SOI MOSFETs. RDF results in nonuniform doping in the channel, leading to deviation in the threshold voltage, which can be computed using this analytical model. The effect of device parameters on RDF-induced threshold voltage deviations is also investigated. For each study, a large sample size has been used. This has been possible owing to the computational efficiency of the analytical model. Studies on the threshold voltage variation due to combined effects of RDF and other device parameter fluctuations have also been carried out.
Keywords :
MOSFET; semiconductor doping; silicon-on-insulator; FD-SOI MOSFET; analytical threshold voltage model; nonuniformly doped channel; random dopant fluctuation effects; Analytical model; FD-SOI MOSFET; nonuniform doping; random dopant fluctuation (RDF);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2010.2044180
Filename :
5424001
Link To Document :
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