An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling

Author

Heo, Deukhyoun ; Gebara, Edward ; Chen, Yi-Jan Emery ; Yoo, Seung-Yup ; Hamai, Michael ; Suh, Youngsuk ; Laskar, Joy

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

48

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2361

Lastpage

2369

Abstract

An improved deep submicrometer (0.25 μm) MOSFET radio-frequency (RF) large signal model that incorporates a new breakdown current model and drain-to-substrate nonlinear coupling was developed and investigated using various experiments. An accurate breakdown model is required for deep submicrometer MOSFETs due to their relatively low breakdown voltage. For the first time, this RF nonlinear model incorporates the breakdown voltage turnover trend into a continuously differentiable channel current model and a new nonlinear coupling circuit between the drain and the lossy substrate. The robustness of the model is verified with measured pulsed I-V, S-parameters, power characteristics, harmonic distortion, and intermodulation distortion levels at different input and output termination conditions, operating biases, and frequencies

Keywords

MOSFET; S-parameters; UHF field effect transistors; avalanche breakdown; capacitance; electric admittance; equivalent circuits; harmonic distortion; intermodulation distortion; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; silicon; 0.1 to 10 GHz; IMD levels; MOSFET RF nonlinear model; RF large signal model; S-parameters; Si; breakdown current model; breakdown voltage turnover trend; continuously differentiable channel current model; deep submicron MOSFET model; drain-to-substrate nonlinear coupling; harmonic distortion; intermodulation distortion; lossy substrate; power characteristics; pulsed I-V characteristics; radiofrequency large signal model; termination conditions; Breakdown voltage; Coupling circuits; Distortion measurement; Electric breakdown; MOSFET circuits; Power measurement; Pulse measurements; RF signals; Radio frequency; Robustness;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.898985

Filename

898985