Title :
Asymmetric coupled CMOS lines-an experimental study
Author :
Arz, Uwe ; William, D.F. ; Walker, David K. ; Grabinski, Hartmut
Author_Institution :
Lab. of Inf. Technol., Hannover Univ., Germany
fDate :
12/1/2000 12:00:00 AM
Abstract :
This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported
Keywords :
CMOS integrated circuits; S-parameters; UHF integrated circuits; coupled mode analysis; coupled transmission lines; field effect MMIC; integrated circuit interconnections; integrated circuit measurement; silicon; skin effect; substrates; transmission line theory; 0.25 micron; 50 MHz to 26.5 GHz; Si; Si substrate; asymmetric coupled CMOS lines; calibrated four-port S-parameter measurements; experimental characterization; frequency-dependent line parameters; line parameters extract; modal cross power; scattering-parameter measurements; CMOS technology; Conductivity measurement; Conductors; Coupling circuits; Frequency; Integrated circuit measurements; Silicon; Substrates; Transmission line measurements; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
