DocumentCode :
1431512
Title :
42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems
Author :
Iwai, Taisuke ; Kebayashi, K. ; Nakasha, Yasuhiro ; Miyashita, Takumi ; Ohara, Shiro ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
48
Issue :
12
fYear :
2000
fDate :
12/1/2000 12:00:00 AM
Firstpage :
2567
Lastpage :
2572
Abstract :
This is the first paper to report on a high-efficiency two-stage heterojunction-bipolar-transistor power-amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz wide-band code-division multiple-access (W-CDMA) cellular phone systems. Power amplifiers for W-CDMA systems are required to operate at high efficiency and high linearity over a wide range of output power levels. To obtain high efficiency at low output power (Pout) as well as at the required maximum Pout and obtain a high linearity at the maximum Pout, we chose near-class-B operation. To improve linearity at a medium Pout range, we suppressed the gain distortion resulting from near-class-B operation by using an adaptive biasing technique. The MMIC exhibited a power-added efficiency of 42%, the highest ever reported, a gain of 30.5 dB, and an adjacent channel leakage power ratio at a 5-MHz offset frequency of -38 dBc at a Pout of 27 dBm under a supply voltage of 3.5 V with 3.84-Mcps hybrid phase-shift keying modulation
Keywords :
MMIC power amplifiers; bipolar MMIC; cellular radio; code division multiple access; heterojunction bipolar transistors; wideband amplifiers; 1.95 GHz; 3.5 V; 30.5 dB; 42 percent; 42% high-efficiency; 5 MHz; 5 MHz offset frequency; HBT power-amplifier MMIC; W-CDMA; W-CDMA cellular phone; adaptive biasing; amplifier distortion; code division multiple access; gain 30.5 dB; gain distortion; heterojunction-bipolar-transistor power-amplifier; high linearity; hybrid phase-shift keying modulation; leakage power ratio; near-class-B operation; supply voltage 3.5 V; two-stage HBT power-amplifier; wide-band CDMA; Cellular phones; Heterojunction bipolar transistors; Linearity; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Multiaccess communication; Power amplifiers; Power generation; Wideband;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.899014
Filename :
899014
Link To Document :
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